switching transistor npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 40 vdc collectorbase voltage v cbo 60 vdc emitterbase voltage v ebo 6.0 vdc collector current e continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg 55 to +150 c device marking mmbt4401lt1 = 2x electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (3) (i c = 1.0 madc, i b = 0) v (br)ceo 40 e vdc collectorbase breakdown voltage (i c = 0.1 madc, i e = 0) v (br)cbo 60 e vdc emitterbase breakdown voltage (i e = 0.1 madc, i c = 0) v (br)ebo 6.0 e vdc base cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i bev e 0.1 m adc collector cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i cex e 0.1 m adc 1. fr5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. pulse test: pulse width 300 m s, duty cycle 2.0%. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 1 publication order number: mmbt4401lt1/d mmbt4401lt1 on semiconductor preferred device 1 2 3 case 31808, style 6 sot23 (to236ab) collector 3 1 base 2 emitter
mmbt4401lt1 http://onsemi.com 2 electrical characteristics (continued) (t a = 25 c unless otherwise noted) characteristic symbol min max unit on characteristics (3) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 150 madc, v ce = 1.0 vdc) (i c = 500 madc, v ce = 2.0 vdc) h fe 20 40 80 100 40 e e e 300 e e collectoremitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) e e 0.4 0.75 vdc baseemitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.75 e 0.95 1.2 vdc smallsignal characteristics currentgain e bandwidth product (i c = 20 madc, v ce = 10 vdc, f = 100 mhz) f t 250 e mhz collectorbase capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c cb e 6.5 pf emitterbase capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c eb e 30 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h ie 1.0 15 k w voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h re 0.1 8.0 x 10 4 smallsignal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h fe 40 500 e output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h oe 1.0 30 mhos switching characteristics delay time (v cc = 30 vdc, v eb = 2.0 vdc, t d e 15 ns rise time (v cc 30 vdc , v eb 2 . 0 vdc , i c = 150 madc, i b1 = 15 madc) t r e 20 ns storage time (v cc = 30 vdc, i c = 150 madc, t s e 225 ns fall time (v cc 30 vdc , i c 150 madc , i b1 = i b2 = 15 madc) t f e 30 ns 3. pulse test: pulse width 300 s, duty cycle 2.0%. figure 1. turnon time figure 2. turnoff time switching time equivalent test circuits scope rise time < 4.0 ns *total shunt capacitance of test jig connectors, and oscilloscope +16 v -2.0 v < 2.0 ns 0 1.0 to 100 m s, duty cycle 2.0% 1.0 k w +30 v 200 w c s * < 10 pf +16 v -14 v 0 < 20 ns 1.0 to 100 m s, duty cycle 2.0% 1.0 k w +30 v 200 w c s * < 10 pf -4.0 v
mmbt4401lt1 http://onsemi.com 3 figure 3. capacitances reverse voltage (volts) 7.0 10 20 30 5.0 figure 4. charge data i c , collector current (ma) 0.1 2.0 5.0 10 20 2.0 30 50 capacitance (pf) q, charge (nc) 3.0 2.0 3.0 5.0 7.0 10 1.0 10 20 50 70 100 200 0.1 300 500 0.7 0.5 v cc = 30 v i c /i b = 10 figure 5. turnon time i c , collector current (ma) 20 30 50 5.0 10 7.0 figure 6. rise and fall times i c , collector current (ma) figure 7. storage time i c , collector current (ma) figure 8. fall time i c , collector current (ma) 20 30 50 70 100 10 5.0 7.0 c obo q t q a 25 c 100 c transient characteristics 3.0 1.0 0.5 0.3 0.2 0.3 0.2 30 t s , storage time (ns) t, time (ns) t, time (ns) t f , fall time (ns) c cb 70 100 10 20 50 70 100 200 300 500 30 i c /i b = 10 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v eb = 2.0 v t d @ v eb = 0 20 30 50 5.0 10 7.0 70 100 10 20 50 70 100 200 300 500 30 v cc = 30 v i c /i b = 10 t r t f 10 20 50 70 100 200 300 500 30 100 200 30 70 50 300 10 20 50 70 100 200 300 500 30 t s = t s - 1/8 t f i b1 = i b2 i c /i b = 10 to 20 v cc = 30 v i b1 = i b2 i c /i b = 20 i c /i b = 10
mmbt4401lt1 http://onsemi.com 4 6.0 8.0 10 0 4.0 2.0 0.1 2.0 5.0 10 20 50 1.0 0.5 0.2 0.01 0.02 0.05 100 figure 9. frequency effects f, frequency (khz) smallsignal characteristics noise figure v ce = 10 vdc, t a = 25 c bandwidth = 1.0 hz nf, noise figure (db) i c = 1.0 ma, r s = 150 w i c = 500 m a, r s = 200 w i c = 100 m a, r s = 2.0 k w i c = 50 m a, r s = 4.0 k w r s = optimum rs = source rs = resistance 100k 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 6.0 8.0 10 0 4.0 2.0 nf, noise figure (db) figure 10. source resistance effects r s , source resistance (ohms) f = 1.0 khz i c = 50 m a i c = 100 m a i c = 500 m a i c = 1.0 ma h parameters v ce = 10 vdc, f = 1.0 khz, t a = 25 c this group of graphs illustrates the relationship between h fe and other aho parameters for this series of transistors. to obtain these curves, a highgain and a lowgain unit were selected from the mmbt4401lt1 lines, and the same units were used to develop the correspondingly numbered curves on each graph.
mmbt4401lt1 http://onsemi.com 5 figure 11. current gain i c , collector current (ma) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 100 200 20 70 50 300 h fe , current gain h ie , input impedance (ohms) figure 12. input impedance i c , collector current (ma) 50k 500 30 5.0 7.0 20k 10k 5.0k 2.0k 1.0k 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 figure 13. voltage feedback ratio i c , collector current (ma) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 0.2 10 figure 14. output admittance i c , collector current (ma) 100 1.0 5.0 7.0 50 20 10 5.0 2.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 h , output admittance ( mhos) oe h , voltage feedback ratio (x 10 ) re -4 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 mmbt4401lt1 unit 1 mmbt4401lt1 unit 2 mmbt4401lt1 unit 1 mmbt4401lt1 unit 2 mmbt4401lt1 unit 1 mmbt4401lt1 unit 2 mmbt4401lt1 unit 1 mmbt4401lt1 unit 2
mmbt4401lt1 http://onsemi.com 6 static characteristics figure 15. dc current gain i c , collector current (ma) figure 16. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector-emitter voltage (volts) 0.5 2.0 3.0 50 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 100 ma 10 20 30 500 ma 0.3 0.5 0.7 1.0 3.0 0.1 h , normalized current gain 0.5 2.0 3.0 10 50 70 0.2 0.3 0.2 100 1.0 0.7 500 30 20 5.0 7.0 fe t j = 125 c -55 c 2.0 200 300 25 c v ce = 1.0 v v ce = 10 v figure 17. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 18. temperature coefficients i c , collector current (ma) voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 +0.5 -1.0 -1.5 -2.0 500 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 10 v vc for v ce(sat) vb for v be 200 0.1 0.2 0.5 coefficient (mv/ c) -2.5 1.0 2.0 5.0 10 20 50 100 500 200 0.1 0.2 0.5
mmbt4401lt1 http://onsemi.com 7 information for using the sot23 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation the power dissipation of the sot23 is a function of the pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot23 package, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. p d = 150 c 25 c 556 c/w = 225 milliwatts the 556 c/w for the sot23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. there are other alternatives to achieving higher power dissipation from the sot23 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
mmbt4401lt1 http://onsemi.com 8 package dimensions case 31808 issue ae sot23 (to236ab) d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. style 6: pin 1. base 2. emitter 3. collector on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mmbt4401lt1/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland thermal clad is a trademark of the bergquist company.
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